发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To efficiently manufacture a semiconductor device having improved mounting strength.SOLUTION: A semiconductor device manufacturing method comprises: forming trenches 4T on top faces 4a of leads 4 of a lead frame LF so as to stride over boundaries BL between the leads 4 and frame parts LFs; mounting a semiconductor chip on a chip mounting part of the lead frame LF and electrically connecting the semiconductor chip with the leads 4; and subsequently forming a body resin part 6mb for encapsulating the semiconductor chip and the leads 4 so as to expose a part of the top faces 4a of the leads 4. In forming of the body resin part 6mb, an in-dam resin part is formed between neighboring leads among the plurality of leads 4 and the frame part LFs and an in-trench resin part 6t is formed inside each trench 4T. The semiconductor device manufacturing method further comprises: irradiating the in-dam resin part and the in-trench resin part 6t with laser beams 55 from the top face 4a side to remove the in-dam resin part and the in-trench resin part 6t; and forming a metal film on a part exposed from the body resin part 6mb by a plating method.</p>
申请公布号 JP2014187308(A) 申请公布日期 2014.10.02
申请号 JP20130062606 申请日期 2013.03.25
申请人 RENESAS ELECTRONICS CORP 发明人 HASEBE HAJIME
分类号 H01L23/50;H01L21/56 主分类号 H01L23/50
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