| 发明名称 |
LOW ENERGY COLLIMATED ION MILLING OF SEMICONDUCTOR STRUCTURES |
| 摘要 |
A method of delayering a surface of a semiconductor structure may include applying a voltage in the range of about 50 eV to less than 300 eV to an inductively coupled Argon ion source operating at a radio frequency. A collimated ion beam incident on the surface of the semiconductor structure may be generated, from the Argon ion source, for the planar removal of layers of the surface. A structural material underlying the surface of the semiconductor structure is exposed using an end-point detector based on the planar removal of the layers. |
| 申请公布号 |
US2014295584(A1) |
申请公布日期 |
2014.10.02 |
| 申请号 |
US201313851148 |
申请日期 |
2013.03.27 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Kane Terence L. |
| 分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of delayering a surface of a semiconductor structure, comprising:
applying a voltage in the range of about 50 eV to less than 300 eV to an inductively coupled Argon ion source operating at a radio frequency; generating, from the Argon ion source, a collimated ion beam incident on the surface of the semiconductor structure for planar removal of layers of the surface; and exposing a structural material underlying the surface of the semiconductor structure using an end-point detector based on the planar removal of the layers. |
| 地址 |
Armonk NY US |
