发明名称 PIEZOELECTRIC MEMS DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To ensure reliability of a piezoelectric device, while enhancing the piezoelectric characteristics based on the crystal orientation, without cracking a piezoelectric thin film.SOLUTION: A piezoelectric MEMS device 1 includes a structure 20 which includes a mechanical element manufactured by semiconductor fabrication process, a support substrate 10 for supporting the structure 20, and a PZT thin film 21 supported by the structure 20. The structure 20 has a lever proximal end 22A supported on the supporting surface 10S of a supporting substrate 10, and a lever distal end 22B extending over the supporting surface 10S. The PZT thin film 21 is provided at at least the lever distal end 22B in the structure 20, and the c-axis orientation is enhanced by AC voltage application performed after molding of the supporting substrate 10.</p>
申请公布号 JP2014187362(A) 申请公布日期 2014.10.02
申请号 JP20140033068 申请日期 2014.02.24
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 KOBAYASHI TAKESHI;SUZUKI YASUHIRO;MAKIMOTO NATSUMI;MAEDA RYUTARO;ITO HISAHIRO;KAMEI TOSHIHIRO;FUNAKUBO HIROSHI;OIKAWA TAKAHIRO;WADA AYUMI
分类号 H01L41/253;B81B3/00;B81C1/00;H01L41/09;H01L41/113;H01L41/257 主分类号 H01L41/253
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