| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device that achieves both high withstand voltage and low loss.SOLUTION: A semiconductor device includes a first-conductivity-type first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer and having a cubic structure, an electrode provided on the second semiconductor layer, and a reaction portion provided between the second semiconductor layer and the electrode. The second semiconductor layer has a top surface inclined to the (100) plane. The reaction portion contains at least one element constituting the second semiconductor layer and at least one element constituting the electrode, and has a projection extending to the second semiconductor layer side.</p> |
