发明名称 METHOD FOR MANUFACTURING A VIBRATOR, VIBRATOR, AND OSCILLATOR
摘要 A method for manufacturing a vibrator according to the present invention includes: forming a coating layer that covers a silicon substrate; patterning the coating layer; forming a semiconductor layer that covers the silicon substrate and the coating layer; forming a vibrating portion having a beam shape on the coating layer and a support portion that supports the vibrating portion by patterning the semiconductor layer; forming an opening that exposes the silicon substrate; forming a recess portion by removing the silicon substrate through the opening; and removing the coating layer. In the step of forming the vibrating portion and the support portion, the support portion having a first portion that is located on the silicon substrate, and a second portion that connects the first portion and the vibrating portion and is located on the coating layer is formed.
申请公布号 US2014292427(A1) 申请公布日期 2014.10.02
申请号 US201414218053 申请日期 2014.03.18
申请人 SEIKO EPSON CORPORATION 发明人 YOSHIZAWA Takahiko
分类号 H01L41/09;H01L41/27;H03H9/17;H03B1/00 主分类号 H01L41/09
代理机构 代理人
主权项 1. A method for manufacturing a vibrator comprising: forming a first coating layer that covers a silicon substrate; patterning the first coating layer into a predetermined shape; forming a semiconductor layer that covers the silicon substrate and the first coating layer; forming a vibrating portion having a beam shape on the first coating layer and a support portion that supports the vibrating portion by patterning the semiconductor layer; forming an opening that exposes the silicon substrate by patterning the first coating layer in a region excluding the vibrating portion and the support portion; forming a recess portion at a position that overlaps the vibrating portion by removing the silicon substrate through the opening; and removing the first coating layer, wherein in the step of forming the vibrating portion and the support portion, the support portion having a first portion that is located on the silicon substrate, and a second portion that connects the first portion and the vibrating portion and is located on the first coating layer is formed.
地址 Tokyo JP