发明名称 |
METHOD FOR MANUFACTURING A VIBRATOR, VIBRATOR, AND OSCILLATOR |
摘要 |
A method for manufacturing a vibrator according to the present invention includes: forming a coating layer that covers a silicon substrate; patterning the coating layer; forming a semiconductor layer that covers the silicon substrate and the coating layer; forming a vibrating portion having a beam shape on the coating layer and a support portion that supports the vibrating portion by patterning the semiconductor layer; forming an opening that exposes the silicon substrate; forming a recess portion by removing the silicon substrate through the opening; and removing the coating layer. In the step of forming the vibrating portion and the support portion, the support portion having a first portion that is located on the silicon substrate, and a second portion that connects the first portion and the vibrating portion and is located on the coating layer is formed. |
申请公布号 |
US2014292427(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
US201414218053 |
申请日期 |
2014.03.18 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
YOSHIZAWA Takahiko |
分类号 |
H01L41/09;H01L41/27;H03H9/17;H03B1/00 |
主分类号 |
H01L41/09 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a vibrator comprising:
forming a first coating layer that covers a silicon substrate; patterning the first coating layer into a predetermined shape; forming a semiconductor layer that covers the silicon substrate and the first coating layer; forming a vibrating portion having a beam shape on the first coating layer and a support portion that supports the vibrating portion by patterning the semiconductor layer; forming an opening that exposes the silicon substrate by patterning the first coating layer in a region excluding the vibrating portion and the support portion; forming a recess portion at a position that overlaps the vibrating portion by removing the silicon substrate through the opening; and removing the first coating layer, wherein in the step of forming the vibrating portion and the support portion, the support portion having a first portion that is located on the silicon substrate, and a second portion that connects the first portion and the vibrating portion and is located on the first coating layer is formed. |
地址 |
Tokyo JP |