发明名称 LIGHT DETECTION DEVICE
摘要 A light detection device 1 has a semiconductor light detection element having a semiconductor substrate, and a mounting substrate arranged as opposed to the semiconductor light detection element. The semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, and electrodes electrically connected to the respective avalanche photodiodes and arranged on a second principal surface side of the semiconductor substrate. The mounting substrate includes a plurality of electrodes arranged corresponding to the respective electrodes on a third principal surface side, and quenching resistors electrically connected to the respective electrodes and arranged on the third principal surface side. The electrodes and the electrodes are connected through bump electrodes.
申请公布号 US2014291486(A1) 申请公布日期 2014.10.02
申请号 US201214350647 申请日期 2012.08.02
申请人 Nagano Terumasa;Hosokawa Noburo;Suzuki Tomofumi;Baba Takashi 发明人 Nagano Terumasa;Hosokawa Noburo;Suzuki Tomofumi;Baba Takashi
分类号 H01L27/144 主分类号 H01L27/144
代理机构 代理人
主权项 1. A light detection device comprising: a semiconductor light detection element having a semiconductor substrate including first and second principal surfaces opposed to each other; and a mounting substrate arranged as opposed to the semiconductor light detection element and having a third principal surface opposed to the second principal surface of the semiconductor substrate, wherein the semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, and first electrodes electrically connected to the respective avalanche photodiodes and arranged on the second principal surface side of the semiconductor substrate, wherein the mounting substrate includes a plurality of second electrodes arranged corresponding to the respective first electrodes on the third principal surface side, and quenching circuits electrically connected to the respective second electrodes and arranged on the third principal surface side, and wherein the first electrodes and the second electrodes corresponding to the first electrodes are connected through bump electrodes.
地址 Hamamatsu-shi JP