| 发明名称 |
SEMICONDUCTOR DEVICE INCLUDING POROUS LOW-K DIELECTRIC LAYER AND FABRICATION METHOD |
| 摘要 |
Semiconductor devices including porous low-k dielectric layers and fabrication methods are provided. A dielectric layer is formed on a substrate by introducing and polymerizing a main reaction gas on a surface of the substrate. The main reaction gas has a chemical structure including a ring-shaped group, silicon, carbon, and hydrogen, and the ring-shaped group includes at least carbon and hydrogen. A porous low-k dielectric layer is then formed from the dielectric layer by curing the dielectric layer with UV light. |
| 申请公布号 |
US2014291817(A1) |
申请公布日期 |
2014.10.02 |
| 申请号 |
US201414178494 |
申请日期 |
2014.02.12 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
ZHOU MING |
| 分类号 |
H01L21/02;H01L23/532 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device comprising:
providing a substrate; forming a dielectric layer on the substrate by introducing and polymerizing a main reaction gas on a surface of the substrate, wherein the main reaction gas has a chemical structure including a ring-shaped group, silicon, carbon, and hydrogen, and wherein the ring-shaped group includes at least carbon and hydrogen; and forming a porous low-k dielectric layer from the dielectric layer by curing the dielectric layer with UV light. |
| 地址 |
Shanghai CN |
