发明名称 |
ANNEALING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER |
摘要 |
Methods are generally provided for forming a conductive oxide layer on a substrate by sputtering a target to deposit a transparent conductive oxide layer (e.g., comprising comprises cadmium, tin, and oxygen) on the substrate; positioning an anneal surface in close proximity to the transparent conductive oxide layer (e.g., about 3 cm or less); and, annealing the transparent conductive oxide layer while the anneal surface is in close proximity to the transparent conductive oxide layer (e.g., at an anneal temperature of about 500 C to about 700 C) to create a localized cadmium vapor between the transparent conductive oxide layer and the anneal surface. The anneal surface can include a material reactive with oxygen at the anneal temperature. Apparatus is also provided for annealing a thin film layer on a substrate. |
申请公布号 |
WO2014074982(A3) |
申请公布日期 |
2014.10.02 |
申请号 |
WO2013US69423 |
申请日期 |
2013.11.11 |
申请人 |
FIRST SOLAR MALAYSIA SDN. BHD.;GOSSMAN, ROBERT DWAYNE;OSBORN, KALI NICOLE;PENG, HONGYING |
发明人 |
GOSSMAN, ROBERT DWAYNE;OSBORN, KALI NICOLE;PENG, HONGYING |
分类号 |
H01L21/44;C23C14/08;C23C14/34 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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