PATTERN FORMING METHOD, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING PATTERN FORMING METHOD, AND ELECTRONIC DEVICE

摘要

Provided is a pattern forming method which comprises: (1) formation of a film with use of an active light-sensitive or radiation-sensitive resin composition; (2) exposure of the film to active light or radiation; and (3) development of the thus-exposed film with use of a developer liquid that contains an organic solvent. The active light-sensitive or radiation-sensitive resin composition contains (A) a resin that has a repeating unit (R) having a structural moiety that is decomposed by irradiation of active light or radiation and produces an acid, and (B) a solvent. The developer liquid contains an additive that establishes at least one interaction selected from among an ionic bond, a hydrogen bond, a chemical bond and a dipolar interaction with respect to a polar group contained in the resin (A) after the exposure. Consequently, this pattern forming method satisfies high sensitivity, high resolution (high resolving power), film thinning suppressing performance, EL (exposure latitude) and local pattern dimension uniformity (Local-CDU) at the same time at extremely high levels. Also provided are: active light-sensitive or radiation-sensitive resin composition which is subjected to this pattern forming method; a resist film which is formed using this active light-sensitive or radiation-sensitive resin composition; a method for producing an electronic device using this pattern forming method; and an electronic device.