| 摘要 |
Provided is a ultraviolet light emitting diode including: a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, which are sequentially formed; a reflecting structure of Al which is formed so as to expose at least a portion of the second conductivity type semiconductor layer on the second conductivity type semiconductor layer; and an ohmic electrode which is formed so as to cover the second conductivity type semiconductor layer revealed between the reflecting structure of the Al, wherein the active layer emits ultraviolet light. |
