SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a memory device allowing suppression of power consumption and to provide a semiconductor device using the memory device.SOLUTION: A transistor using an oxide semiconductor film as an active layer is provided in each memory cell of a memory device as a switching element for holding charges stored in a transistor functioning as a memory element. The transistor used as the memory element has: a first gate electrode, a second gate electrode; a semiconductor film located between the first gate electrode and the second gate electrode; a first insulating film located between the first gate electrode and the semiconductor film; a second insulating film located between the second gate electrode and the semiconductor film; and a source electrode and a drain electrode in contact with the semiconductor film.