SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device where an element having a new function in a wiring layer.SOLUTION: A semiconductor device comprises: a first wiring layer 150 and a semiconductor element 200 formed on a semiconductor substrate. The first wiring layer 150 comprises: an insulating layer 156; and first wiring 154 buried in a surface of the insulating layer 156. The semiconductor element 200 comprises: a semiconductor layer 220; a gate insulating film 160; and a gate electrode 210. The semiconductor layer 220 is located on the first wiring layer 150. The gate insulating film 160 is located on or under the semiconductor layer 220. The gate electrode 210 is located on a side opposite to the semiconductor layer 220 through the gate insulating film 160.