发明名称 SUBSTRATE TESTING APPARATUS AND SUBSTRATE TEMPERATURE ADJUSTMENT METHOD
摘要 Provided is a substrate testing apparatus capable of adjusting a substrate to a desired temperature. A prober (10) is provided with: a stage (11), upon which a wafer (W) on which a semiconductor device has been formed, is placed; a testing head (14) which tests electrical properties of the semiconductor device on the placed wafer (W); a temperature adjustment system (25) which adjusts the temperature of the stage (11); and a temperature adjustment flow path (28) which passes through the stage (11). The temperature adjustment system (25) has: a high-temperature chiller (26) which supplies a high-temperature medium to the temperature adjustment flow path (28); a low-temperature chiller (27) which supplies a low-temperature medium to the temperature adjustment flow path (28); and a mixing valve unit (29) which mixes the high-temperature medium and the low-temperature medium which are supplied to the temperature adjustment flow path (28).
申请公布号 WO2014157123(A1) 申请公布日期 2014.10.02
申请号 WO2014JP58153 申请日期 2014.03.18
申请人 TOKYO ELECTRON LIMITED 发明人 AKAIKE, YUTAKA;KOBAYASHI, DAI
分类号 H01L21/66;H01L21/683 主分类号 H01L21/66
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