发明名称 |
CARBON-DOPED ZINC OXIDE FILM AND METHOD FOR PRODUCING SAME |
摘要 |
Disclosed is a carbon-doped zinc oxide film which is produced by at least one film formation process selected from a sputtering process and a PLD process and is composed of zinc oxide polycrystals doped with carbon at a concentration of 1.0 × 1019 atoms/cm3 or more. The carbon-doped zinc oxide film can be produced by a method comprising the steps of: providing a composite target comprising zinc, oxygen and carbon as constituent elements; and forming a film by a sputtering process and/or a PLD process using the composite target to thereby form the carbon-doped zinc oxide film. According to the present invention, a zinc oxide film doped with carbon at a high concentration can be produced and provided in a relatively simple and inexpensive manner with high reliability. |
申请公布号 |
WO2014157000(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
WO2014JP57877 |
申请日期 |
2014.03.20 |
申请人 |
NAGOYA INSTITUTE OF TECHNOLOGY;NGK INSULATORS, LTD. |
发明人 |
TANEMURA MASAKI;KAWASAKI SHINJI;KATSUDA YUJI;SATO YOSUKE |
分类号 |
C30B29/16;C23C14/08;C30B23/08;H01L21/203 |
主分类号 |
C30B29/16 |
代理机构 |
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