| 摘要 |
Proposed is a semiconductor device having a stack structure with a substrate, interlayer insulation films alternately laminated on the substrate, and gate electrodes. The gate electrode has a shape with a longitudinal width tapered toward one end thereof, includes through-holes vertically penetrating the stack structure, and includes vertical structures filling in the through-holes. The vertical structure includes a gap fill pattern formed at a center of the through-hole, a channel pattern enclosing an outer side of the gap fill pattern, and a gate dielectric film enclosing an outer side of the channel pattern. And, the gate dielectric film includes a tunneling film in contact with the channel pattern, a charge trapping layer in contact with the tunneling film, a barrier film in contact with the charge trapping layer, and a protective pattern positioned between the gate electrode, the barrier film and the interlayer insulation film and enclosing the tapered portions of the gate electrodes. |
