发明名称 |
FREE FORM PRINTING OF SILICON MICRO- AND NANOSTRUCTURES |
摘要 |
A method of making a three-dimensional structure in semiconductor material includes providing a substrate (20) is provided having at least a surface including semiconductor material. Selected areas of the surface of the substrate are exposed to a focussed ion beam whereby the ions are implanted in the semiconductor material in the selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focussed ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure (30) defined by the focussed ion beam is etched away so as to provide a three-dimensional structure on the substrate (20). |
申请公布号 |
EP2556015(A4) |
申请公布日期 |
2014.10.01 |
申请号 |
EP20110766241 |
申请日期 |
2011.04.05 |
申请人 |
NIKLAUS, FRANK;FISCHER, ANDREAS |
发明人 |
NIKLAUS, FRANK;FISCHER, ANDREAS |
分类号 |
B81C99/00;B81C1/00;B82Y10/00;B82Y20/00;G01Q90/00;H01L21/20;H01L21/265 |
主分类号 |
B81C99/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|