发明名称 |
METHOD FOR FORMING METAL SILICIDE LAYERS |
摘要 |
The present invention is related to a method for forming a metal silicide layer on a textured silicon substrate surface. The method includes providing a metal layer on a textured silicon substrate and performing a pulsed laser annealing step providing at least one UV laser pulse with a laser fluence in the range between 0.1 J/cm2 and 1.5 J/cm2 and with a laser pulse duration in the range between 1 ns and 10 ms. Then, the method includes converting at least part of the metal layer into a metal silicide layer. In addition, the present invention is related to the use of such a method in a process for fabricating a photovoltaic cell, wherein the dielectric layer is a surface passivation layer, or wherein the dielectric layer is an antireflection coating. |
申请公布号 |
EP2783396(A1) |
申请公布日期 |
2014.10.01 |
申请号 |
EP20120797813 |
申请日期 |
2012.11.23 |
申请人 |
IMEC;KATHOLIEKE UNIVERSITEIT LEUVEN;EXCICO GROUP NV |
发明人 |
TOUS, Loic;ALEMAN, Monica;JOHN, Joachim;EMERAUD, Thierry |
分类号 |
H01L31/0224;H01L31/18 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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