| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for an LED device chip having a light emitting layer formed on a sapphire substrate, in which light emitted from a side surface of the light emitting layer is not easily blocked, thereby enhancing brightness. <P>SOLUTION: A light emitting layer 3 formed of GaN (an n layer 31 and a p layer 32) is removed along a scheduled division line 21 formed on a sapphire substrate 2 by etching, and a laser beam LB is applied from a back surface side of the sapphire substrate 2 to form a modified layer 312 at a foot portion 311 of the n layer 31 which cannot be removed by the etching. Subsequently, external force is applied to the modified layer 312 to divide and separate the foot portion 311 of the n layer 31 with the modified layer 312 set as a starting point. Finally, the surface of the sapphire substrate 2 exposed along the scheduled division line 21 by the etching is subjected to cutting processing to obtain many LED device chips 1A. <P>COPYRIGHT: (C)2012,JPO&INPIT |
