发明名称 |
Treatment process of an oxidized transition metal nitride layer |
摘要 |
<p>The process comprises oxidizing a metal oxide layer (2) on a surface of a first layer (1) made of nitride metal, using an oxidizing plasma species having an oxidation degree that is higher than oxygen, to form a nitride metal layer or a fluoride metal layer, and reducing nitride metal layer using a hydrogen plasma and a nitrogen plasma for forming a second layer made of nitride metal. An independent claim is included for a light emitting diode.</p> |
申请公布号 |
EP2498279(B1) |
申请公布日期 |
2014.10.01 |
申请号 |
EP20120157408 |
申请日期 |
2012.02.29 |
申请人 |
ALTIS SEMICONDUCTOR |
发明人 |
AUBE, MICHEL;DE PERSON, PIERRE |
分类号 |
C23C14/06;C23C14/58;H01L21/28;H01L21/768;H01L29/45;H01L33/40 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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