| 摘要 |
<p>The present invention provides a semiconductor device which can maintain the current mirror rate of temperature dependence in a circuit which consumes power to generate a considerable self-heating effect in two MOS Trs of different size required for a relative accuracy. The semiconductor device (1) comprises a pair (105) which consists of a MOS Tr. (103) of preset size divided with at least two parts and a MOS Tr. (104) divided with the same size to form a periodical arrangement structure in a substrate (102), thereby not affecting a current mirror rate of the total size of MOS Tr. (103) and the MOS Tr (104) due to the non-uniformity of temperature distribution according to locations.</p> |
