发明名称
摘要 A process to manufacture a semiconductor optical modulator is disclosed, in which the process easily forms a metal film including AuZn for the p-ohmic metal even a contact hole has an enhanced aspect ration. The process forms a mesa including semiconductor layers first, then, buries the mesa by a resin layer sandwiched by insulating films. The resin layer provides an opening reaching the top of the mesa, into which the p-ohmic metal is formed. Another metal film including Ti is formed on the upper insulating film along the opening.
申请公布号 JP5598297(B2) 申请公布日期 2014.10.01
申请号 JP20100273700 申请日期 2010.12.08
申请人 发明人
分类号 G02F1/017;G02B6/12;G02B6/13 主分类号 G02F1/017
代理机构 代理人
主权项
地址
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