| 摘要 |
A semiconductor device according to an embodiment includes a nitride semiconductor layer, a gate electrode formed on the nitride semiconductor layer, a source electrode formed on the nitride semiconductor layer, a drain electrode which is formed on the opposite side of the source electrode with regard to the gate electrode on the nitride semiconductor layer, a first silicon nitride layer which is formed on the nitride semiconductor layer between the drain electrode and the gate electrode, and a second silicon nitride layer which is formed between the nitride semiconductor layer and the gate electrode and has an atomic ratio of silicon to nitrogen which is lower than that of the first silicon nitride layer. |
