MULTIPLE FIELD PLATE TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a multiple field plate transistor having an improved breakdown voltage and a method for manufacturing the same. The method for manufacturing a multiple field plate transistor comprises the steps of: forming a first nitride semiconductor layer having a first energy band gap; forming, on the first nitride semiconductor layer, a second nitride semiconductor layer having a second energy band gap different from the first energy band gap; forming a nitride gate layer on the second nitride semiconductor layer; forming a third nitride semiconductor layer positioned in a gate region and a multiple field plate positioned between the gate region and a drain region by patterning the nitride gate layer; and forming a source electrode and a drain electrode on the second nitride semiconductor layer with the third nitride semiconductor layer and the multiple field plate therebetween.