SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A silicon carbide layer (50) includes a first region (51) having a first conductivity type, a second region (52) provided on the first region (51) and having a second conductivity type, and a third region (53) provided on the second region (52) and having the first conductivity type. A trench (TR) having an inner surface is formed in the silicon carbide layer (50). The trench (TR) penetrates the second and third regions (52, 53). The inner surface of the trench (TR) has a first side wall (SW1) and a second side wall (SW2) located deeper than the first side wall (SW1) and having a portion made of the second region (52). Inclination of the first side wall (SW1) is smaller than inclination of the second side wall (SW2).