SUPERJUNCTION SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

摘要

According to an aspect of the present invention, a method for manufacturing a super-junction semiconductor comprises the step of: 1) forming an epitaxial layer in which N-type impurities are low doped on a substrate; 2) applying photoresists on the upper portion of the epitaxial layer; and 3) forming a mask barrier rib pattern having a space for forming a P-type conductive pillar as an opening portion by etching the photoresists. Thereby, the mask rib barrier pattern is formed in a structure that implants fewer impurities at the center and more impurities in the peripheral portion.