Method for preparing a layer comprising a nickel monosilicide NiSi on a substrate containing silicon

摘要

The method involves heating a nickel layer, element e.g. platinum, palladium or rhodium, layer and layer comprising an element e.g. platinum, palladium or rhodium, and nickel, at a temperature for forming a layer comprising nickel silicide. Fluorine is incorporated in the layer comprising nickel silicide. The layer comprising nickel silicide is heated at a temperature for transforming the layer comprising nickel silicide into a layer comprising nickel silicide integrally in a form of nickel mono silicide. Independent claims are also included for the following: (1) a layer comprising an element (2) a method for fabricating an electronic device (3) an electronic device comprising a silicon element (4) a method for fabricating a three-dimensional metal oxide semiconductor type integrated circuit (5) a three-dimensional metal oxide semiconductor type integrated circuit.