| 发明名称 | Magnetic random access memory | ||
| 摘要 | A magnetic random access memory is configured as a read/write memory and at least a first section of the magnetic random access memory is configured to be converted to a read only memory. | ||
| 申请公布号 | US8848437(B2) | 申请公布日期 | 2014.09.30 |
| 申请号 | US201314012119 | 申请日期 | 2013.08.28 |
| 申请人 | Intel Mobile Communications GmbH | 发明人 | Hildebrand Uwe;Hausner Josef;Obemeier Matthias;Bergman Daniel |
| 分类号 | G11C11/14;G11C11/16;G06F12/00 | 主分类号 | G11C11/14 |
| 代理机构 | Eschweiler & Associates, LLC | 代理人 | Eschweiler & Associates, LLC |
| 主权项 | 1. A device, comprising: a processing unit; a first memory device electrically coupled to processing unit; and a second memory device electrically coupled to the first memory device and the processing unit, wherein the first memory device is configured as a read/write memory and a first section of the first memory device is irreversibly convertible to a read only memory, wherein the second memory device are configured for read write operation, and wherein the first and second memory devices are integrated on a single semiconductor chip. | ||
| 地址 | Neubiberg DE | ||