发明名称 |
Resistive memory cell |
摘要 |
Semiconductor memory devices, resistive memory devices, memory cell structures, and methods of forming a resistive memory cell are provided. One example method of a resistive memory cell can include a number of dielectric regions formed between two electrodes, and a barrier dielectric region formed between each of the dielectric regions. The barrier dielectric region serves to reduce an oxygen diffusion rate associated with the dielectric regions. |
申请公布号 |
US8847196(B2) |
申请公布日期 |
2014.09.30 |
申请号 |
US201113109052 |
申请日期 |
2011.05.17 |
申请人 |
Micron Technology, Inc. |
发明人 |
Rocklein Matthew N.;Ramaswamy D. V. Nirmal |
分类号 |
H01L29/06;H01L45/00;H01L27/24 |
主分类号 |
H01L29/06 |
代理机构 |
Brooks, Cameron & Huebsch, PLLC |
代理人 |
Brooks, Cameron & Huebsch, PLLC |
主权项 |
1. A resistive memory cell, comprising:
a number of dielectric regions formed between two electrodes; and a silicon dioxide barrier dielectric region formed between each of the dielectric regions, wherein the silicon dioxide barrier dielectric region serves to reduce an oxygen diffusion rate associated with the dielectric regions, and wherein each of the number of dielectric regions and silicon dioxide barrier dielectric regions are formed to be amorphous. |
地址 |
Boise ID US |