Process for CMP with large feature size variation

摘要

Embodiments of the present invention relate to reducing the size variation on a wafer fabrication. In some embodiments, at least a portion the backfill material over features larger than a threshold size is etched or milled to provide backfill protrusions over those features. The backfill protrusions are configured to reduce the size variation across the fabrication. Embodiments of the invention may be used in fabrication of many types of devices, such as tapered wave guides (TWG), near-field transducers (NFT), MEMS devices, EAMR optical devices, optical structures, bio-optical devices, micro-fluidic devices, and magnetic writers.

主权项

1. A method, comprising:
obtaining a substrate patterned with a plurality of features and having a backfill material deposited over the plurality of features, the backfill material deposited over the plurality of features forming a corresponding plurality of backfill feature projections, a first group of the plurality of backfill feature projections having sizes greater than or equal to a threshold size and a second group of the backfill feature projections have sizes less than the threshold size; and removing a portion of the backfill material of a first backfill feature projection of the first group of backfill feature projections without removing the backfill material from a second backfill feature projection of the second group of backfill feature projections.