Flash memory with small data programming capability

摘要

A method comprises receiving a request to access a memory array having one or more memory erase units with a data area of flash array and with a specific amount of memory which offers small data programming capability, the specific amount of memory configured to be erased simultaneously or sequentially with a main memory block of the memory array; and if the memory access request includes programming small data, then providing access to the specific amount of memory, or if the memory access request does not include programming small data, then providing access to the data area of flash array. The size of the specific amount of memory may be pre-defined, and the specific amount of memory may be a different memory technology.

主权项

1. A method comprising:
receiving a request to access a memory array comprising one or more memory erase units, said one or more memory erase units comprising a data area of flash array and a specific amount of memory which offers small data programming capability, wherein the specific amount of memory is configured to be erased simultaneously with a main memory block of the memory array using one command or sequential commands; and if the memory access request includes programming small data, then providing access to the specific amount of memory, or if the memory access request does not include programming small data, then providing access to the data area of flash array; wherein a size of the specific amount of memory of a corresponding memory erase unit is pre-defined so as to be between 1.5 percent and 1.6 percent of a size of said data area of flash array of the corresponding memory erase unit.