Semiconductor storage device and driving method thereof

摘要

A semiconductor storage device according to the present embodiment includes local word lines and bit lines intersecting the local word lines. Each memory segment includes nonvolatile memory cells. Each memory segment corresponds to a plurality of the local word lines. A sense amplifier corresponds to a plurality of the bit lines. A global word line corresponds to a plurality of the local word lines, and is commonly driven in the memory segments. A decoder is connected between the global word line and the local word lines corresponding to the global word line, and selectively drives a certain local word line from the local word lines. A segment controller is provided in each memory segment, and selects one of the memory segments to be driven. An input/output part outputs read data from the memory segments or receives write data to the memory segments.

主权项

1. A semiconductor storage device comprising:
a plurality of local word lines; a plurality of bit lines intersecting the local word lines; a plurality of memory segments each including a plurality of nonvolatile memory cells provided to correspond to intersections between the local word lines and the bit lines, each of the memory segments being provided to correspond to a plurality of the local word lines; a sense amplifier provided to correspond to a plurality of the bit lines; a global word line provided to correspond to a plurality of the local word lines, and configured to be commonly driven in the memory segments; a decoder connected between the global word line and the local word lines corresponding to the global word line, and configured to selectively drive a certain local word line from the local word lines; a segment controller provided in each of the memory segments, and configured to select one of the memory segments to be driven; and an input/output part configured to output read data from the memory segments or to receive write data to the memory segments, wherein during a read operation in which the sense amplifier reads out a certain page data, the segment controller and the decoder change the local word line selected in a second memory segment among the memory segments without changing the global word line selected in the second memory segment, when read data from a first memory segment among the memory segments is output from the input/output part.