| 发明名称 | Magnetoresistive elements and memory devices including the same | ||
| 摘要 | Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer. | ||
| 申请公布号 | US8848432(B2) | 申请公布日期 | 2014.09.30 |
| 申请号 | US201213591809 | 申请日期 | 2012.08.22 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Lee Sung-chul;Kim Kwang-seok;Kim Kee-won;Jang Young-man;Pi Ung-hwan |
| 分类号 | G11C11/16;G11C11/15;H01L43/08 | 主分类号 | G11C11/16 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A magnetoresistive element, comprising: a free layer having a changeable magnetization direction; a pinned layer facing the free layer and having a fixed magnetization direction; and an auxiliary element on a surface of the pinned layer, the auxiliary element directly contacting the pinned layer, wherein the auxiliary element has a width smaller than a width of the pinned layer and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer. | ||
| 地址 | Gyeonggi-Do KR | ||