发明名称 Method for producing piezoelectric thin-film element, piezoelectric thin-film element, and member for piezoelectric thin-film element
摘要 Provided is a method for producing a piezoelectric thin-film element including a piezoelectric thin-film layer having good surface morphology and high crystallinity. The method includes forming a lower electrode layer on a substrate; forming a piezoelectric thin-film buffer layer on the lower electrode layer at a relatively low film-formation temperature; forming a piezoelectric thin-film layer on the piezoelectric thin-film buffer layer at a film-formation temperature that is higher than the film-formation temperature for the piezoelectric thin-film buffer layer; and forming an upper electrode layer on the piezoelectric thin-film layer.
申请公布号 US8847470(B2) 申请公布日期 2014.09.30
申请号 US201313748687 申请日期 2013.01.24
申请人 Murata Manufacturing Co., Ltd. 发明人 Ikeuchi Shinsuke;Yamamoto Kansho
分类号 H01L41/22;C23C14/08;H01L41/187;H01L41/316;H01L41/319;H01L41/08;C23C14/00 主分类号 H01L41/22
代理机构 Dickstein Shapiro LLP 代理人 Dickstein Shapiro LLP
主权项 1. A piezoelectric thin-film element comprising a substrate; a lower electrode layer on the substrate; and at least one piezoelectric thin-film buffer layer containing granular crystals on the lower electrode layer, a crystallized piezoelectric thin-film layer on the piezoelectric thin-film buffer layer, and an upper electrode layer on the piezoelectric thin-film layer, wherein the piezoelectrics of the piezoelectric thin-film buffer layer and the piezoelectric thin-film layer have a perovskite structure containing K, Na, and Nb.
地址 Nagaokakyo-Shi, Kyoto-fu JP