发明名称 |
Method for producing piezoelectric thin-film element, piezoelectric thin-film element, and member for piezoelectric thin-film element |
摘要 |
Provided is a method for producing a piezoelectric thin-film element including a piezoelectric thin-film layer having good surface morphology and high crystallinity. The method includes forming a lower electrode layer on a substrate; forming a piezoelectric thin-film buffer layer on the lower electrode layer at a relatively low film-formation temperature; forming a piezoelectric thin-film layer on the piezoelectric thin-film buffer layer at a film-formation temperature that is higher than the film-formation temperature for the piezoelectric thin-film buffer layer; and forming an upper electrode layer on the piezoelectric thin-film layer. |
申请公布号 |
US8847470(B2) |
申请公布日期 |
2014.09.30 |
申请号 |
US201313748687 |
申请日期 |
2013.01.24 |
申请人 |
Murata Manufacturing Co., Ltd. |
发明人 |
Ikeuchi Shinsuke;Yamamoto Kansho |
分类号 |
H01L41/22;C23C14/08;H01L41/187;H01L41/316;H01L41/319;H01L41/08;C23C14/00 |
主分类号 |
H01L41/22 |
代理机构 |
Dickstein Shapiro LLP |
代理人 |
Dickstein Shapiro LLP |
主权项 |
1. A piezoelectric thin-film element comprising a substrate; a lower electrode layer on the substrate; and at least one piezoelectric thin-film buffer layer containing granular crystals on the lower electrode layer, a crystallized piezoelectric thin-film layer on the piezoelectric thin-film buffer layer, and an upper electrode layer on the piezoelectric thin-film layer, wherein the piezoelectrics of the piezoelectric thin-film buffer layer and the piezoelectric thin-film layer have a perovskite structure containing K, Na, and Nb. |
地址 |
Nagaokakyo-Shi, Kyoto-fu JP |