Bump with protection structure

摘要

A semiconductor device includes a bump structure formed on a post-passivation interconnect (PPI) line and surrounded by a protection structure. The protection structure includes a polymer layer and at least one dielectric layer. The dielectric layer may be formed on the top surface of the polymer layer, underlying the polymer layer, inserted between the bump structure and the polymer layer, inserted between the PPI line and the polymer layer, covering the exterior sidewalls of the polymer layer, or combinations thereof.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a passivation layer over the semiconductor substrate; a post-passivation interconnect (PPI) line overlying the passivation layer; a protection structure overlying the passivation layer and the PPI line, wherein the protection structure has an opening at least exposing a portion of the PPI line; and a bump structure formed in the protection structure and electrically connected to the PPI line through the opening of the protection structure; wherein the protection structure comprises
a polymer layer having opposite top and bottom surfaces, and opposite sidewall surfaces connecting the top surface and the bottom surface, anda dielectric layer surrounding the polymer layer, the dielectric layer covering the top surface, the bottom surface and the opposite sidewall surfaces of the polymer layer.