| 发明名称 |
Integrated circuit and IC manufacturing method |
| 摘要 |
Disclosed is an integrated circuit die comprising an active substrate including a plurality of components laterally separated from each other by respective isolation structures, at least some of the isolation structures carrying a further component, wherein the respective portions of the active substrate underneath the isolation structures carrying said further components are electrically insulated from said components. A method of manufacturing such an IC die is also disclosed. |
| 申请公布号 |
US8847347(B2) |
申请公布日期 |
2014.09.30 |
| 申请号 |
US201213687172 |
申请日期 |
2012.11.28 |
| 申请人 |
NXP B.V. |
发明人 |
Wessels Piet;Berckmans Nico;Lim Khin Hoong;Bolt Michael John Ben;Dubois Jerome Guillaume Anna;Agrawal Naveen;Bisht Gaurav Singh;Thillaigovindan Jayaraj;Liao Jie |
| 分类号 |
H01L29/00;H01L21/762;H01L29/06 |
主分类号 |
H01L29/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit die comprising an active substrate including a plurality of components laterally separated from each other by respective isolation structures, a plurality of serially connected polysilicon resistors carried by at least some of the isolation structures;
wherein each of the isolation structures carrying a serially connected polysilicon resistor is surrounded by an electrically insulating guard ring extending through the active substrate; wherein the respective portions of the active substrate underneath the isolation structures carrying said polysilicon resistors are electrically insulated from said components. |
| 地址 |
Eindhoven NL |
