| 发明名称 | Silane or borane treatment of metal thin films | ||
| 摘要 | The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition. | ||
| 申请公布号 | US8846550(B1) | 申请公布日期 | 2014.09.30 |
| 申请号 | US201313830322 | 申请日期 | 2013.03.14 |
| 申请人 | ASM IP Holding B.V. | 发明人 | Shero Eric;Haukka Suvi |
| 分类号 | H01L21/31;H01L21/469;H01L21/02;H01L21/28 | 主分类号 | H01L21/31 |
| 代理机构 | Knobbe Martens Olson & Bear LLP | 代理人 | Knobbe Martens Olson & Bear LLP |
| 主权项 | 1. A method for forming a gate stack comprising: providing a substrate comprising a dielectric material and a first metal-containing thin film over the dielectric material; contacting the first metal-containing thin film with a silane compound or a borane compound; after contacting the substrate with the silane or borane compound, depositing a second metal-containing thin film over the first thin film. | ||
| 地址 | NL | ||