发明名称 Vias between conductive layers to improve reliability
摘要 Another semiconductor device includes a first layer including a plurality of electrically conductive wires, a second layer, a plurality of non-functional via pads are included in the second layer or between the first layer and the second layer. A dangling via is included within a specified area of the first layer. The dangling vias connect one or more of the wires in the first layer to a respective one of the via pads.
申请公布号 US8847393(B2) 申请公布日期 2014.09.30
申请号 US201113036461 申请日期 2011.02.28
申请人 Freescale Semiconductor, Inc. 发明人 Hoang Tuan S.;Sharma Puneet
分类号 H01L21/4763;H01L23/48;H01L23/52;H01L29/40;H01L23/528;H01L23/522 主分类号 H01L21/4763
代理机构 代理人 Clingan, Jr. James L.;Bertani Mary Jo
主权项 1. A semiconductor device comprising: a first layer including a plurality of electrically conductive wires; a second layer including a plurality of electrically conductive wires; a non-conductive material between the first layer and the second layer; a first electrically conductive via through the non-conductive material connecting the first and second layers at an intersection of a first wire on the first layer and a first wire on the second layer at a location where a redundant via is not possible; and a second electrically conductive via coupled between a second wire on the second layer to a conductive member that is electrically isolated from wires in any other layer of the semiconductor device and sufficiently close to the first electrically conductive via to provide protection to the first electrically conductive via from outgassing problems; wherein the wires in the first and second layers are smaller than wires that conduct power and ground signals in the semiconductor device.
地址 Austin TX US