| 发明名称 | Through-hole substrate and method of producing the same | ||
| 摘要 | A substrate (3) in which a through-hole (2) is filled with a filler (4) is prepared, and a structure (6), at least a part of the surface of which has an insulating property, is formed on the surface of the substrate (3). A plated layer (7) is formed on the substrate (3) having the structure (6) formed thereon, and the filler (4) and the structure (6) are removed. Thus, a through-hole substrate (8) is formed, in which the plated layer (7) having an opening (9) communicating with the through-hole (2) is provided on at least one surface of a substrate (1). | ||
| 申请公布号 | US8846526(B2) | 申请公布日期 | 2014.09.30 |
| 申请号 | US201213884461 | 申请日期 | 2012.04.06 |
| 申请人 | Canon Kabushiki Kaisha | 发明人 | Teshima Takayuki |
| 分类号 | H01L21/4763;H05K3/42;H01J1/46;H01L21/768;C25D3/00;H01L23/48;C25D5/02;C25D5/00;H01J9/14;C23C18/00 | 主分类号 | H01L21/4763 |
| 代理机构 | Fitzpatrick, Harper, Harper & Scinto | 代理人 | Fitzpatrick, Harper, Harper & Scinto |
| 主权项 | 1. A method of producing a through-hole substrate, comprising: preparing a substrate having a through-hole filled with a filler containing a material capable of being selectively removed with respect to the substrate; forming a structure, at least a part of a surface of which has an insulating property, in a region including at least a part of the through-hole on at least one surface of the substrate; forming a plated layer on the substrate having the structure formed thereon; and removing the filler and the structure after forming the plated layer. | ||
| 地址 | Tokyo JP | ||