Low-resistance electrode design

摘要

A solution for designing a semiconductor device, in which two or more attributes of a pair of electrodes are determined to, for example, minimize resistance between the electrodes, is provided. Each electrode can include a current feeding contact from which multiple fingers extend, which are interdigitated with the fingers of the other electrode in an alternating pattern. The attributes can include a target depth of each finger, a target effective width of each pair of adjacent fingers, and/or one or more target attributes of the current feeding contacts. Subsequently, the device and/or a circuit including the device can be fabricated.

主权项

1. A method of designing a semiconductor device, the method comprising:
configuring a set of attributes of an interface between a first electrode to a semiconductor structure of the semiconductor device and a second electrode to the semiconductor structure, wherein each electrode includes a current feeding contact and a plurality of fingers extending therefrom, and wherein the plurality of fingers of the first and second electrodes are adjacent to each other in an alternating pattern, the configuring including determining at least one target attribute of the current feeding contact of each of the first and second electrodes based on at least one of: a target depth, dFING, for each of the plurality of fingers, a target effective width, W, of each pair of adjacent fingers of the first electrode and the second electrode, an impedance of the current feeding contact per unit width, ZCMB, and an impedance of a pair of adjacent fingers with the semiconductor structure there between per unit width, ZFINGSC.