Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus

摘要

An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.

主权项

1. A method of manufacturing a semiconductor device, comprising:
(a) forming a lower oxide film containing a first element and a second element on a lens formed on a substrate using a first source containing silicon as the first element, a second source containing metal as the second element, an oxidizing source and a catalyst, the lower oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper oxide film containing the first element on the lower oxide film using the first source, the oxidizing source and the catalyst, the upper oxide film having a refractive index greater than that of the air and less than that of the lower oxide film.