发明名称 Booster circuit, solid-state imaging device, and camera system
摘要 A booster circuit including an output terminal; a reference voltage generating section that generates a boosting reference voltage; a charge pump section that boosts the reference voltage and outputs the boosted reference voltage from the output terminal; and an output-terminal voltage holding section that holds the output terminal at a voltage of a high level at a standby time. The charge pump section includes an input node, at least one boosting node, at least one reference node, at least one boosting capacitor, and a plurality of switching transistors that are provided between the input node and the at least one boosting node, between a boosting node at a last stage and the output terminal, between the input node and the reference node, and between a reference potential and a reference node, and are switched on or off by a switch signal.
申请公布号 US8848078(B2) 申请公布日期 2014.09.30
申请号 US201213633359 申请日期 2012.10.02
申请人 Sony Corporation 发明人 Okano Masafumi
分类号 H04N3/14;H04N5/335;H02M3/07 主分类号 H04N3/14
代理机构 Dentons US LLP 代理人 Dentons US LLP
主权项 1. A booster circuit comprising: an output terminal; a reference voltage generating section that generates a boosting reference voltage; a charge pump section that boosts the reference voltage and outputs the boosted reference voltage via the output terminal; and an output-terminal voltage holding section that holds the output terminal at a voltage of a high level at a standby time, wherein, (1) the charge pump section includes (a) an input node to which the reference voltage is input,(b) at least one boosting node formed between the input node and the output terminal,(c) at least one reference node corresponding to the boosting node and formed between the input node and a reference potential,(d) at least one boosting capacitor having a first terminal connected to a corresponding boosting node and a second terminal connected to a corresponding reference node, and(e) a plurality of switching transistors that are provided between the input node and the at least one boosting node, between a boosting node at a last stage and the output terminal, between the input node and the reference node, and between the reference potential and the reference node, and are switched on or off by a switch signal, and (2) at the standby time, the output-terminal voltage holding section connects an output side of the reference voltage generating section or the output terminal to a potential equivalent to the high level, and controls an on/off action of those of the switching transistors which are connected between at least the input node in the charge pump section and the output terminal, depending on whether the potential equivalent to the high level is connected to the output side of the reference voltage generating section or the output terminal.
地址 Tokyo JP