Remote radical hydride dopant incorporation for delta doping in silicon

摘要

The present invention generally relates to methods of forming substrates using remote radical hydride doping. The methods generally include remotely activating a gas and introducing activated radicals of the gas into a chamber. The activated radicals may be activated hydride radicals of a gas such as diborane (B2H6), phosphine (PH3), or arsine (AsH3) which are utilized to incorporate an element such as boron, phosphorus, or arsenic into a substrate having a surface temperature between about 400 degrees Celsius and about 1000 degrees Celsius. Alternatively, the activated radicals may be activated radicals of an inert gas. The activated radicals of the inert gas are introduced into a chamber having a dopant-containing gas, such as diborane, phosphine, or arsine, therein. The activated radicals of the inert gas activate the dopant-gas and incorporate dopants into a heated substrate located within the chamber.

主权项

1. A method for doping a substrate, comprising:
positioning a substrate having a hardmask thereon within a chamber; elevating the temperature of the substrate to range between about 400 degrees Celsius and about 1000 degrees Celsius; introducing a dopant-containing gas to a remote plasma generator, the remote plasma generator in fluid communication with the chamber; generating a plasma of the dopant-containing gas within the remote plasma generator, the plasma containing ions and radicals; flowing the dopant-containing gas from the remote plasma generator to the chamber, wherein during the flowing a majority of the ions are filtered or become charge neutral; introducing the dopant-containing gas into the chamber; and doping the substrate by incorporating an element of the radicals into the substrate.