| 发明名称 | Method for fabricating semiconductor device | ||
| 摘要 | A method for fabricating a semiconductor device includes providing a substrate including first landing plugs and second landing plugs that are arrayed on a first line, forming a capping layer over the substrate, forming hole-type first trenches that expose the second landing plugs by selectively etching the capping layer, forming an insulation layer over the substrate including the first trenches, forming line-type second trenches that are stretched on the first line while overlapping with the first trenches by selectively etching the insulation layer, and forming a first conductive layer inside the second trenches. | ||
| 申请公布号 | US8846472(B2) | 申请公布日期 | 2014.09.30 |
| 申请号 | US201213406739 | 申请日期 | 2012.02.28 |
| 申请人 | Hynix Semiconductor Inc. | 发明人 | Yi Hong-Gu |
| 分类号 | H01L21/336;H01L21/44;H01L21/4763;H01L21/768;H01L27/108 | 主分类号 | H01L21/336 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A method for fabricating a semiconductor device, comprising: providing a substrate including first landing plugs and second landing plugs that are arrayed on a first line; forming a capping layer over the substrate; forming hole-type first trenches that expose the second landing plugs by selectively etching the capping layer; forming an insulation layer over the substrate including the first trenches; forming line-type second trenches that are stretched on the first line while overlapping with the first trenches by selectively etching the insulation layer; and forming a first conductive layer inside the second trenches. | ||
| 地址 | Gyeonggi-do KR | ||