Laser, plasma etch, and backside grind process for wafer dicing

摘要

Front side laser scribing and plasma etch are performed followed by back side grind to singulate integrated circuit chips (ICs). A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to advance a front of an etched trench partially through the semiconductor wafer thickness. The front side mask is removed, a backside grind tape applied to the front side, and a back side grind performed to reach the etched trench, thereby singulating the ICs.

主权项

1. A system for dicing a substrate comprising a plurality of integrated circuits (ICs), the system comprising:
a laser scribe module; a plasma etch module physically coupled to the laser scribe module; a back side grinding module; a computing device comprising a processor and memory storing instructions executable by the processor to cause:
the laser scribe module to pattern a mask disposed above the substrate to form a trench exposing regions of the substrate between the ICs,the plasma etch module to plasma etch the substrate to advance the trench partially through the substrate, andthe back side grinding module to perform back side grinding of the substrate to reach the etched trench; anda robotic transfer chamber to transfer a laser scribed substrate from the laser scribe module to the plasma etch module.