Light emitting devices with built-in chromaticity conversion and methods of manufacturing

摘要

Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

主权项

1. A light emitting device, comprising:
a first semiconductor material; a first contact on the first semiconductor material; a second semiconductor material spaced apart from the first semiconductor material; a conversion material on the second semiconductor material, the conversion material including a superlattice structure; an active region between the first and second semiconductor materials, the active region being configured to produce a first emission via electroluminescence; and a second contact having a first portion on the conversion material and a second portion extending through the conversion material to the second semiconductor material, wherein:
the conversion material is configured to produce a second emission after being stimulated by the first emission via photoluminescence;the superlattice structure has a bandgap corresponding to the second emission; anda combination of the first and second emissions approximates a target chromaticity.