ALD processing techniques for forming non-volatile resistive switching memories

摘要

ALD processing techniques for forming non-volatile resistive-switching memories are described. In one embodiment, a method includes forming a first electrode on a substrate, maintaining a pedestal temperature for an atomic layer deposition (ALD) process of less than 100° Celsius, forming at least one metal oxide layer over the first electrode, wherein the forming the at least one metal oxide layer is performed using the ALD process using a purge duration of less than 20 seconds, and forming a second electrode over the at least one metal oxide layer.

主权项

1. A non-volatile resistive switching memory element comprising:
a first electrode; a second electrode; and a resistive-switching layer between the first electrode and the second electrode; wherein the resistive-switching layer comprises a first metal oxide and a second metal oxide; wherein the first metal oxide is different from the second metal oxide; and wherein the resistive-switching layer further comprises one of carbon or hydrogen.