Enhanced doherty amplifier with asymmetrical semiconductors

摘要

Amplifier units and methods of use are described herein. A amplifier unit includes a first amplifier and a second amplifier connected in parallel, the first amplifier and the second amplifier comprising semiconductor devices that are not the same amplifier design. The present application also discloses a signal input line connected to the first amplifier and the second amplifier. A signal output line is also disclosed which is connected to the first amplifier and the second amplifier.

主权项

1. A Doherty-type amplifier, comprising:
a signal preparation unit; a main amplifier coupled to the signal preparation unit, the main amplifier comprising a GaN heterojunction field effect transistor (HFET); and an auxiliary amplifier coupled to the signal preparation unit, the auxiliary amplifier comprising a lateral double-diffused metal oxide semiconductor (LDMOS) transistor; wherein the signal preparation unit is configured to provide a first portion of an input signal to the main amplifier and a second portion of the input signal to the auxiliary amplifier, wherein the main amplifier is configured to amplify the first portion of the input signal through the GaN heterojunction field effect transistor to produce a first amplified signal, wherein the auxiliary amplifier is configured to amplify the second portion of the input signal through the LDMOS semiconductor to produce a second amplified signal, and wherein an output of the Doherty-type amplifier is based on the first amplified signal and the second amplified signal.