Method for indium sputtering and for forming chalcopyrite-based solar cell absorber layers

摘要

A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap.

主权项

1. A method for forming a solar cell, said method comprising:
providing a target of indium and a further material selected from the group consisting of Al, Zn, Cr, Ni, and Ta; providing a substrate with a back contact layer thereon; forming metallic precursor layers over said back contact layer including sputtering materials of said target onto said substrate over said back contact layer; and thermally processing thereby converting said metallic precursor layers to an absorber layer.