Forming a diffusion break during a RMG process

摘要

Embodiments herein provide approaches for forming a diffusion break during a replacement metal gate process. Specifically, a semiconductor device is provided with a set of replacement metal gate (RMG) structures over a set of fins patterned from a substrate; a dielectric material over an epitaxial junction area; an opening formed between the set of RMG structures and through the set of fins, wherein the opening extends through the dielectric material, the expitaxial junction area, and into the substrate; and silicon nitride (SiN) deposited within the opening to form the diffusion break.

主权项

1. A method for forming a device, the method comprising:
providing a set of replacement metal gate (RMG) structures over a set of fins patterned from a substrate; providing a dielectric material over an epitaxial junction area; forming an opening between the set of RMG structures and through the set of fins, wherein the opening extends through the dielectric material, the expitaxial junction area, and into the substrate; and depositing silicon nitride (SiN) within the opening to form a diffusion break in the device.