Metal cut process flow

摘要

A method for optimizing masks used for forming conductive features and a method for creating the mask features on an IC device are disclosed. An exemplary embodiment includes receiving a design database including a plurality of conductive features. First and second features suitable for joining are identified from the plurality of conductive features. A joined feature corresponding to the first and the second features is characterized. A cut shape configured to separate the first and second features from the joined feature is also characterized. The joined feature is categorized into a first conductive mask, the cut shape is categorized into a cut mask, and a third feature is categorized into a second conductive mask. The categorized shapes and features of the first conductive mask, the second conductive mask, and the cut mask are provided for manufacturing a mask set corresponding to the categorized shapes and features.

主权项

1. A method of manufacturing an IC device comprising:
receiving an IC device precursor; forming a dielectric layer on the IC device precursor; forming a first and second hard mask layer on the dielectric layer, wherein the first hard mask layer is formed above the second hard mask layer; patterning the first hard mask layer using a first mask to form a first pattern on the first hard mask layer; patterning the second hard mask layer using the first pattern of the first hard mask layer and a second mask that is different from the first mask to form a second mask pattern that defines a first set of conductive features; patterning the first hard mask layer using a third mask that is different from both the first mask and the second mask to form a third pattern on the first hard mask layer; transferring the third mask pattern to the second hard mask layer from the first hard mask layer to define a second set of conductive features; etching the dielectric layer using the second hard mask layer having the second mask pattern and the third mask pattern formed thereupon; and depositing a conductive material to form the first and second sets of conductive features.